CHA6005-99F |
Part Number | CHA6005-99F |
Manufacturer | United Monolithic Semiconductors |
Description | The CHA6005-99F is a high power amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wid... |
Features |
■ High power : 32.5dBm ■ High PAE : 38% ■ Frequency band : 8-12GHz ■ Linear gain : 22dB ■ DC bias: Vd=8Volt@Id=350mA ■ Chip size 3x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm (3dBcomp) 24 350 22 300 20 250 18 200 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range G Linear Gain P1dB Output Power @ 3dB comp. PAE Power Added Efficiency @ 3dB comp. Min Typ Max Unit 8 12 GHz 22 dB 31.5 dBm 38 % Ref. : DSCHA60052244 - 31 Aug 12 1/10 Speci... |
Document |
CHA6005-99F Data Sheet
PDF 208.37KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA6005-QEG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
2 | CHA6015-99F |
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2-8GHz High Power Amplifier | |
3 | CHA6042 |
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13-16GHz High Power Amplifier | |
4 | CHA6105 |
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8-12GHz Driver Amplifier | |
5 | CHA6194-QXG |
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37-40GHz Power Amplifier |