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PMZ200UNE |
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| Part Number | PMZ200UNE |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene... |
| Features |
• Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 1.4 A; Tj = 25 °C Min Typ Max Unit - - 30 V ... |
| Document |
 PMZ200UNE Data Sheet
PDF 227.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZ200UNE |
nexperia |
N-channel MOSFET |
|
| 2 | PMZ250UN |
NXP Semiconductors |
N-channel TrenchMOS extremely low level FET |
|
| 3 | PMZ270XN |
NXP Semiconductors |
N-channel TrenchMOS extremely low level FET |
|
| 4 | PMZ290UNE |
nexperia |
N-channel MOSFET |
|
| 5 | PMZ290UNE |
NXP |
N-channel Trench MOSFET |
|