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IPD110N12N3G |
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| Part Number | IPD110N12N3G |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.2.4 Final Industrial&Multimarket OptiMOSTM3Power... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen free according to IEC61249-2-21 * • Ideal for high-frequency switching and synchronous rectification Type IPS110N12N3 G IPD110N12N3 G IPD110N12N3 G IPS110N12N3 G 120 V 11 mΩ 75 A Package PG-TO251-3 PG-TO252-3 Marking 110N12N 110N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Sy... |
| Document |
 IPD110N12N3G Data Sheet
PDF 573.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD110N12N3 |
Infineon |
MOSFET |
|
| 2 | IPD110N12N3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD100N04S4-02 |
Infineon |
Power-Transistor |
|
| 4 | IPD100N06S4-03 |
Infineon |
Power-Transistor |
|
| 5 | IPD105N03LG |
Infineon |
Power Transistor |
|