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SQD10N30-330H |
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| Part Number | SQD10N30-330H |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | OF CHANGE S15-1136-Rev. C, 12-May-15 7 Document Number: 67070 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCR... |
| Features |
• TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Drain connected to tab G S D G Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free S N-Channel MOSFET TO-252 SQD10N30-330H-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Curr... |
| Document |
 SQD10N30-330H Data Sheet
PDF 218.63KB |
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