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IRFP250MPBF |
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| Part Number | IRFP250MPBF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
5°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
www.irf.com
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Max. 30 21 120 214 1.4 ± 20 315 30 2... |
| Document |
 IRFP250MPBF Data Sheet
PDF 253.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFP250MPbF |
Infineon |
MOSFET |
|
| 2 | IRFP250M |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRFP250 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | IRFP250 |
Fairchild |
N-Channel Power MOSFET |
|
| 5 | IRFP250 |
ST Microelectronics |
N-CHANNEL MOSFET |
|