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IRHN7250SE |
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| Part Number | IRHN7250SE |
| Manufacturer | International Rectifier |
| Description | PD - 91780B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) IRHN7250SE 200V, N-CHANNEL RAD Hard™ HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHN7250SE 100K Rads (S... |
| Features |
n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂
TJ TS... |
| Document |
 IRHN7250SE Data Sheet
PDF 123.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRHN7250 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 2 | IRHN7230 |
International Rectifier |
N-Channel Transistor |
|
| 3 | IRHN7130 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 4 | IRHN7150 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 5 | IRHN7450 |
International Rectifier |
(IRHN7450 / IRHN8450) HEXFET TRANSISTOR |
|