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IPD096N08N3G |
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| Part Number | IPD096N08N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100... |
| Features |
• Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPD096N08N3 G IPD096N08N3 G Product Summary VDS RDS(on),max ID 80 V 9.6 mW 73 A Package Marking PG-TO252-3 096N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain cu... |
| Document |
 IPD096N08N3G Data Sheet
PDF 335.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD096N08N3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPD096N08N3 |
Infineon |
Power-Transistor |
|
| 3 | IPD090N03L |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPD090N03L |
Infineon |
MOSFET |
|
| 5 | IPD090N03LG |
Infineon |
MOSFET |
|