. . . . . 1 Maximum ratings 3 Thermal characteristics .
•FastswitchingMOSFETforSMPS
•OptimizedtechnologyforDC/DCconverters
•QualifiedaccordingtoJEDEC1)fortargetapplications
•N-channel,logiclevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Avalancherated
•Pb-freeplating
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
9
mΩ
ID
40
A
DPAK
tab
2 1
3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPD090N03L G E8177
Package PG-TO252-3
Marking 090N03L
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2020.
isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9mΩ ·Enha.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPD090N03LG |
Infineon |
MOSFET | |
2 | IPD090N03LGE8177 |
Infineon |
MOSFET | |
3 | IPD096N08N3 |
INCHANGE |
N-Channel MOSFET | |
4 | IPD096N08N3 |
Infineon |
Power-Transistor | |
5 | IPD096N08N3G |
Infineon Technologies |
Power-Transistor | |
6 | IPD09N03L |
Infineon Technologies AG |
OptiMOS Buck converter series | |
7 | IPD09N03LA |
Infineon Technologies AG |
Power Transistor | |
8 | IPD09N03LAG |
Infineon |
Power Transistor | |
9 | IPD025N06N |
Infineon |
MOSFET | |
10 | IPD025N06N |
INCHANGE |
N-Channel MOSFET | |
11 | IPD029N04NF2S |
Infineon |
MOSFET | |
12 | IPD031N03L |
Infineon |
Power-Transistor |