FSTJ9055D, FSTJ9055R TM Data Sheet June 2000 File Number 4756.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs .
• 62A, -60V, rDS(ON) = 0.023Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
• Photo Current - 6nA Per-RAD(Si)/s Typically
• Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2
Symbol
D
G
S
Packaging
TO-254AA
Ordering Information
RAD LEVEL 10K 10K 100K 100K 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FSTJ9055R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs | |
2 | FSTJ9055R1 |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs | |
3 | FSTJ9055R4 |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs | |
4 | FSTJ9055D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs | |
5 | FSTJ9055D1 |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs | |
6 | FSTJ9055D3 |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs | |
7 | FST100100 |
TRANSYS |
SCHOTTKY DIODE | |
8 | FST100100 |
DACO |
SCHOTTKY DIODE MODULE | |
9 | FST100100 |
GeneSiC |
Silicon Power Schottky Diode | |
10 | FST10020 |
GeneSiC |
Silicon Power Schottky Diode | |
11 | FST10020 |
Micro Commercial Components |
100 Amp Rectifier 20 to 100 Volts Schottky Barrier | |
12 | FST10020 |
TRANSYS |
SCHOTTKY DIODE |