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ME20N10 |
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| Part Number | ME20N10 |
| Manufacturer | Matsuki |
| Description | The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
● RDS(ON)≦78mΩ@VGS=10V ● RDS(ON)≦98mΩ@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-252-3L) Top View e Ordering Information: ME20N10 (Pb-free) ME20N10-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation* TC=25℃ TC=70℃ Operating... |
| Document |
 ME20N10 Data Sheet
PDF 528.85KB |
| Distributor | Stock | Price | Buy |
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