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HYB25DC256163CE-4 |
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| Part Number | HYB25DC256163CE-4 |
| Manufacturer | Qimonda |
| Description | The 256-Mbit Double-Data-Rate SGRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256-Mbit Double-Data-Rate SGRA... |
| Features |
of the product family HYB25DC256163CE and the ordering information.
1.1 Features
• Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is center-aligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenc... |
| Document |
 HYB25DC256163CE-4 Data Sheet
PDF 677.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HYB25DC256163CE-5 |
Qimonda |
256-Mbit Double-Data-Rate SGRAM |
|
| 2 | HYB25DC256163CE-6 |
Qimonda |
256-Mbit Double-Data-Rate SGRAM |
|
| 3 | HYB25DC256160C |
Infineon Technologies Corporation |
(HYB25DC256160C / HYB25DC256800C) 256M-Bit DDR SDRAM |
|
| 4 | HYB25DC256160CE |
Infineon |
256 Mbit Double-Data-Rate SDRAM |
|
| 5 | HYB25DC256160CF |
Infineon |
256 Mbit Double-Data-Rate SDRAM |
|