CEP60N10 |
Part Number | CEP60N10 |
Manufacturer | CET |
Description | CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current hand... |
Features |
100V, 57A, RDS(ON) = 24mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
100
±20
57 228 200 1.3
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Curren... |
Document |
CEP60N10 Data Sheet
PDF 373.94KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CEP60N10V |
CET |
N-Channel MOSFET | |
2 | CEP60N06G |
CET |
N-Channel MOSFET | |
3 | CEP6020P |
Chino-Excel Technology |
Single P-Channel Enhancement Mode MOSFET | |
4 | CEP6030AL |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | CEP6030L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |