M29W160FB |
Part Number | M29W160FB |
Manufacturer | Numonyx |
Description | ..... 6 2 Signal descriptions... . . . ... |
Features |
Supply voltage – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read – VPP = 12 V for Fast Program (optional, available in the M29W320FT/B only) Access time: 70, 80 ns Programming time – 10 μs per byte/word typical Memory organization: – M29W160FT/B: 35 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 32 main blocks – M29W320FT: 67 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 64 main blocks Program/Erase controller – Embedded byte/word program algorithms Erase Susp... |
Document |
M29W160FB Data Sheet
PDF 795.89KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | M29W160FT |
Numonyx |
3V supply Flash memory | |
2 | M29W160BB |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
3 | M29W160BT |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
4 | M29W160DB |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory | |
5 | M29W160DT |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory |