Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . 6 2 Signal descriptions . . . . . 12 2.1 Address inputs (A0-Amax) 12 2.2 Data inputs/outputs (DQ0-DQ7) . . . . . . . ..
Supply voltage
– VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read
– VPP = 12 V for Fast Program (optional, available in the M29W320FT/B only)
Access time: 70, 80 ns
Programming time
– 10 μs per byte/word typical
Memory organization:
– M29W160FT/B: 35 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 32 main blocks
– M29W320FT: 67 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 64 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Susp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M29W160FB |
Numonyx |
3V supply Flash memory |
|
| 2 | M29W160BB |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory |
|
| 3 | M29W160BT |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory |
|
| 4 | M29W160DB |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory |
|
| 5 | M29W160DT |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory |
|
| 6 | M29W160EB |
ST Microelectronics |
16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory |
|
| 7 | M29W160EB |
Numonyx |
16 Mbit 3V Supply Flash Memory |
|
| 8 | M29W160ET |
ST Microelectronics |
16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory |
|
| 9 | M29W160ET |
Numonyx |
16 Mbit 3V Supply Flash Memory |
|
| 10 | M29W102BB |
ST Microelectronics |
1 Mbit 64Kb x16 / Boot Block Low Voltage Single Supply Flash Memory |
|
| 11 | M29W102BT |
ST Microelectronics |
1 Mbit 64Kb x16 / Boot Block Low Voltage Single Supply Flash Memory |
|
| 12 | M29W116BB |
STMicroelectronics |
16 Mbit Low Voltage Single Supply Flash Memory |
|