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Features
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Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1 Drain-Source On-State Resistance1
ID(ON) RDS(ON)
VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V VGS = 4.5V, ID = 8A VGS = 10V, ID = 10A
60 1 1.5 2.5
V
±250 nA
1
µA 10
22 A
59 75 mΩ
42 55
REV 1.0
1 Aug-24-2009
NIKO-SEM
N-Channel Logic Level Enhancement
P5506BDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Forward Transconduc...
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P5506BDG Data Sheet
