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Features
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= 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source Resistance1 On-State IDSS ID(ON) VDS = 40V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V VGS = 4.5V, ID = 4.5A RDS(ON) gfs VGS = 10V, ID = 5.5A VDS = 10V, ID = 5.5A 20 55 42 14 75 55 m S 60 1.0 1.5 2.5 ±100 1 10 µA A V nA MIN TYP MAX UNIT
Forward Transconductance1
1
SEP-30-2004
NIKO-SEM
www.DataSheet4U.com
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P5506BVG
SOP-8 Lead-Free
DYNAMIC Input Capacitance Output Capacitance Reverse Transfe...
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P5506BVG Data Sheet
