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IRFZ34NLPBF |
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| Part Number | IRFZ34NLPBF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp... |
| Features |
34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC RθJA
www.irf... |
| Document |
 IRFZ34NLPBF Data Sheet
PDF 289.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFZ34NL |
International Rectifier |
Power MOSFET |
|
| 2 | IRFZ34N |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRFZ34N |
International Rectifier |
Power MOSFET |
|
| 4 | IRFZ34N |
ART CHIP |
Power MOSFET |
|
| 5 | IRFZ34NPBF |
International Rectifier |
HEXFET Power MOSFET |
|