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L8550HSLT1G |
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| Part Number | L8550HSLT1G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP complement: L8550H ƽWe declare that the material of ... |
| Features |
er-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO
IC
Max -25 -40 -5 -1500
Unit V V V
mAdc
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C
Symbol PD
R θJ A PD
Max
Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
Thermal Resistance,Junction to Ambient Junction and Storage Temperature
1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. R θJ A T j,T St g 417 -55 to +150 °C/W °C Rev.... |
| Document |
 L8550HSLT1G Data Sheet
PDF 77.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | L8550HSLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 2 | L8550HPLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L8550HPLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | L8550HQLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | L8550HQLT3G |
Leshan Radio Company |
General Purpose Transistors |
|