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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qual.
er-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO
IC
Max -25 -40 -5 -1500
Unit V V V
mAdc
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C
Symbol PD
R θJ A PD
Max
Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
Thermal Resistance,Junction to Ambient Junction and Storage Temperature
1. FR
–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R θJ A T j,T St g
417 -55 to +150
°C/W °C
Rev..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | L8550HPLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 2 | L8550HQLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L8550HQLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | L8550HRLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | L8550HRLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 6 | L8550HSLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 7 | L8550HSLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 8 | L8550 |
LRC |
TO-92 Plastic-Encapsulate Transistors |
|
| 9 | L8550 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 10 | L8550PLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 11 | L8550PLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 12 | L8550PLT3G |
Leshan Radio Company |
General Purpose Transistors |
|