L8050HRLT1G |
Part Number | L8050HRLT1G |
Manufacturer | Leshan Radio Company |
Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar type. ƽNPN complement: L8050H ƽPb-Free Package is av... |
Features |
ate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient Junction and Storage Temperature
1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol VCEO VCBO VEBO IC Max 25 40 5 1500 Unit V V V mAdc Symbol PD R θJ A PD R θJ A T j,T St g Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 -55 to +150 °C/W °C L8050HQLTIG Series S-L8050HQLTIG Series 3 1 2 SOT –23 COLLECTOR 3 1 BASE 2 EMITTER Rev.A 1/3 LESHAN RADIO COMPANY, LTD. L8050HQLT... |
Document |
L8050HRLT1G Data Sheet
PDF 80.80KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | L8050HRLT3G |
Leshan Radio Company |
General Purpose Transistors | |
2 | L8050HPLT1G |
Leshan Radio Company |
General Purpose Transistors | |
3 | L8050HPLT3G |
Leshan Radio Company |
General Purpose Transistors | |
4 | L8050HQLT1G |
Leshan Radio Company |
General Purpose Transistors | |
5 | L8050HQLT3G |
Leshan Radio Company |
General Purpose Transistors |