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LBC807-16WT3G |
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| Part Number | LBC807-16WT3G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and a... |
| Features |
C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θJA PD
R θJA T J , Tstg
1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Max 150 1.2 833 200 1.6 625 –55to+150 Unit mW mW/°C °C/W mW mW/°C °C/W °C Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBC807-16WT1G S-LBC807-16WT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collecto... |
| Document |
 LBC807-16WT3G Data Sheet
PDF 70.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LBC807-16WT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 2 | LBC807-16LT1 |
Leshan Radio Company |
(LBC807-xxLT1) General Purpose Transistors PNP Silicon |
|
| 3 | LBC807-16LT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | LBC807-16LT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | LBC807-25LT1 |
Leshan Radio Company |
(LBC807-xxLT1) General Purpose Transistors PNP Silicon |
|