RJK6011DJA |
Part Number | RJK6011DJA |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
• Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) G 321 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch... |
Document |
RJK6011DJA Data Sheet
PDF 131.50KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET | |
2 | RJK6012DPE |
Renesas |
N-Channel Power MOSFET | |
3 | RJK6012DPP |
Renesas |
N-Channel Power MOSFET | |
4 | RJK6012DPP-A0 |
Renesas |
High Speed Power Switching MOSFET | |
5 | RJK6013DPE |
Renesas Technology |
Silicon N-Channel MOSFET |