LBAS16TT1G Leshan Radio Company Silicon Switching Diode Datasheet, en stock, prix

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LBAS16TT1G

Leshan Radio Company
LBAS16TT1G
LBAS16TT1G LBAS16TT1G
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Part Number LBAS16TT1G
Manufacturer Leshan Radio Company
Description LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Uni...
Features mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) ORDERING INFORMATION Device LBAS16TT1G S-LBAS16TT1G LBAS16TT3G S-LBAS16TT3G Marking A6 A6 Shipping 3000/Tape&Reel 10000/Tape&Reel Unit V mA mA mW mW/°C °C Unit °C/mW Symbol VF IR CD trr QS VFR SC-89 3 CATHODE 1 ANODE Min Max Unit mV — 715 — 866 — 1000 — 1250 µA ...

Document Datasheet LBAS16TT1G Data Sheet
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