LBAS16TT1G |
Part Number | LBAS16TT1G |
Manufacturer | Leshan Radio Company |
Description | LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Uni... |
Features |
mA) (IF = 50 mA) (IF = 150 mA)
Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C)
Capacitance (VR = 0, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1)
Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3)
ORDERING INFORMATION
Device
LBAS16TT1G S-LBAS16TT1G
LBAS16TT3G S-LBAS16TT3G
Marking A6
A6
Shipping 3000/Tape&Reel
10000/Tape&Reel
Unit V mA mA
mW mW/°C
°C
Unit °C/mW
Symbol VF
IR
CD trr QS VFR
SC-89
3 CATHODE
1 ANODE
Min Max Unit
mV — 715 — 866 — 1000 — 1250
µA ... |
Document |
LBAS16TT1G Data Sheet
PDF 221.08KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | LBAS16TT3G |
Leshan Radio Company |
Silicon Switching Diode | |
2 | LBAS16TW1T1G |
Leshan Radio Company |
SURFACE MOUNT FAST SWITCHING DIODE | |
3 | LBAS16BST5G |
LRC |
Switching Diode | |
4 | LBAS16HT1 |
Leshan Radio Company |
Switching Diode | |
5 | LBAS16LT1 |
Leshan Radio Company |
Switching Diode |