LBAS16BST5G - LRC

LBAS16BST5G Switching Diode

LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. ƽ We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device LBAS16BST1G Marking 3* Shipping 5000/Tape&Reel LB.

Features

V R = 75 Vdc, T J = 150°C) (V R = 25 Vdc, T J = 150°C) Reverse Breakdown Voltage (I BR = 100 µAdc) IR V (BR) Forward Voltage VF (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Diode Capacitance CD (V R = 0, f = 1.0 MHz) Forward Recovery Voltage (I F = 10 mAdc, t r = 20 ns) Reverse Recovery Time (I F = I R = 10 mAdc, R L = 50 Ω) Stored Charge (I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω) V FR t rr QS LBAS16BST5G 1 2 SOD882 1 Cathode 2 Anode Unit Vdc mAdc mAdc Unit mW mW/°C °C/W °C Min — — — 75 — — — — — — — — Max Unit µAdc 1.0 50 30 — Vdc mV 715 855 1.