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IRF7805PbF |
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| Part Number | IRF7805PbF |
| Manufacturer | International Rectifier |
| Description | This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal... |
| Features |
VDS RDS(on) Qg Qsw Qoss
IRF7805PbF 30V 11mΩ
31nC 11.5nC 36nC
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V cPulsed Drain Current ePower Dissipation ePower Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead egRθJA Junction-to-Ambient
Max. 30 ± 12 13 10 100 2.5 1.6
0.02 -55 to + 150
Units V
A
W
W/°C °C
Typ. – –... |
| Document |
 IRF7805PbF Data Sheet
PDF 222.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF7805PBF |
Infineon |
Power MOSFET |
|
| 2 | IRF7805PBF-1 |
International Rectifier |
Power MOSFET |
|
| 3 | IRF7805 |
International Rectifier |
N-Channel Power MOSFET |
|
| 4 | IRF7805A |
International Rectifier |
N-Channel Power MOSFET |
|
| 5 | IRF7805TRPbF-1 |
Infineon |
Power MOSFET |
|