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B1253 |
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| Part Number | B1253 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 12.5 3.5 15.0±0.2 0.7 s Features q Optimum for 40W HiFi output q Hi... |
| Features |
q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V q Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.3 11.0±0.2 φ3.2±0.1 5.0±0.2 3.2 2.0±0.2 2.0±0.1 Solder Dip 16.2±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 1.1±0.1 5.45±0.3 10.9±0.5 0.6±0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Jun... |
| Document |
 B1253 Data Sheet
PDF 73.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | B125-C1000 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS |
|
| 2 | B125-C1500 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS |
|
| 3 | B125-C1500R |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS |
|
| 4 | B1250T |
BOURNS |
SMD Power Cross Protection Fuse |
|
| 5 | B1252 |
Panasonic |
Power Transistors |
|