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IRG4PH50SPbF |
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| Part Number | IRG4PH50SPbF |
| Manufacturer | IRF |
| Description | PD -95525A IRG4PH50SPbF INSULATED GATE BIPOLAR TRANSISTOR Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tig... |
| Features |
Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package Lead-Free
C
G E
n-channel
Standard Speed IGBT
VCES =1200V VCE(on) typ. = 1.47V
@VGE = 15V, IC = 33A
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
V... |
| Document |
 IRG4PH50SPbF Data Sheet
PDF 223.98KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG4PH50S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG4PH50S-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRG4PH50K |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG4PH50KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG4PH50KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|