FSYE13A0R - Intersil Corporation

FSYE13A0R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYE13A0D, FSYE13A0R Data Sheet May 1999 File Number 4741 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event G.

Features

• 12A, 100V, rDS(ON) = 0.160Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
• Photo Current - 1.5nA Per-RAD(Si)/s Typically
• Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Packaging SMD.5 Ordering Information RAD LEVEL 10K 10K 100K 100K 10.