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GAL6002 |
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| Part Number | GAL6002 |
| Manufacturer | Lattice Semiconductor |
| Description | Having an FPLA architecture, the GAL6002 provides superior flexibility in state-machine design. The GAL6002 offers the highest degree of functional integration, flexibility, and speed currently availa... |
| Features |
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 15ns Maximum Propagation Delay — 75MHz Maximum Frequency — 6.5ns Maximum Clock to Output Delay — TTL Compatible 16mA Outputs — UltraMOS® Advanced CMOS Technology • ACTIVE PULL-UPS ON ALL PINS • LOW POWER CMOS — 90mA Typical Icc • E2 CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention • UNPRECEDENTED FUNCTIONAL DENSITY — 78 x 64 x 36 FPLA Architecture — 10 Output Logic Macrocells — 8 Buried Logic Macrocells — 20 Input and I/O Logic Macrocells • HIGH-LEVEL... |
| Document |
 GAL6002 Data Sheet
PDF 244.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GAL6001 |
Lattice Semiconductor |
High Performance E2CMOS FPLA Generic Array Logic |
|
| 2 | GAL16LV8 |
Lattice Semiconductor |
Low Voltage E2CMOS PLD Generic Array Logic |
|
| 3 | GAL16V8 |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic |
|
| 4 | GAL16V8-15LJ |
ETC |
CMOS Electrically Erasable Programmable Logic Device |
|
| 5 | GAL16V8-25LP |
ETC |
CMOS Electrically Erasable Programmable Logic Device |
|