The GAL16LV8D, at 3.5 ns maximum propagation delay time, provides the highest speed performance available in the PLD market. The GAL16LV8C can interface with both 3.3V and 5V signal levels. The GAL16LV8 is manufactured using Lattice Semiconductor's advanced 3.3V E2CMOS process, which combines CMOS with Electrically Erasable (E2) floating gate technology. Hig.
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology
• 3.3V LOW VOLTAGE 16V8 ARCHITECTURE — JEDEC-Compatible 3.3V Interface Standard — 5V Compatible Inputs — I/O Interfaces with Standard 5V TTL Devices (GAL16LV8C)
• ACTIVE PULL-UPS ON ALL PINS (GAL16LV8D Only)
• E CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS — Maximum Flexibility for .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GAL16V8 |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic | |
2 | GAL16V8-15LJ |
ETC |
CMOS Electrically Erasable Programmable Logic Device | |
3 | GAL16V8-25LP |
ETC |
CMOS Electrically Erasable Programmable Logic Device | |
4 | GAL16V8-883 |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic | |
5 | GAL16V8A |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic | |
6 | GAL16V8A-10 |
National Semiconductor |
Generic Array Logic | |
7 | GAL16V8A-12 |
National Semiconductor |
Generic Array Logic | |
8 | GAL16V8A-15 |
National Semiconductor |
Generic Array Logic | |
9 | GAL16V8A-20 |
National Semiconductor |
Generic Array Logic | |
10 | GAL16V8AS |
ST Microelectronics |
EPROM CMOS Programmable Logic Device | |
11 | GAL16V8B |
Lattice Semiconductor |
High Performance E2CMOS PLD | |
12 | GAL16V8S |
ST Microelectronics |
EPROM CMOS Programmable Logic Device |