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SPD50N06S2L-13 |
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| Part Number | SPD50N06S2L-13 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
| Features |
version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
SPD50N06S2L-13
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
- 0.69 1.1 K/W - - 100
- - 75 - - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 55
-
-V
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
VGS(th) 1.2 1.6
2
ID=80µA
Zero gate voltage drain current
VDS=55V, VGS=0V, Tj=25°C VDS=55V, VGS=0V, Tj=125°C
Gate-source leakage current
IDSS IGSS
µA - 0.01 1 - 1 100 - 1 1... |
| Document |
 SPD50N06S2L-13 Data Sheet
PDF 262.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD50N06S2L-13 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 2 | SPD50N06S2-14 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 3 | SPD50N03S2 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPD50N03S2-07 |
Infineon Technologies |
Power-Transistor |
|
| 5 | SPD50N03S2-07G |
Infineon |
Power-Transistor |
|