3DD164 |
Part Number | 3DD164 |
Manufacturer | Qunli Electric |
Description | Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD164(166), 3DD167(169) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.... |
Features |
1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+
TECHNICAL DATA:
Parameter name
Symbols Unit
Collector-Emitter Voltage VCEO V
Collector-Emitter Breakdown Voltage
V(BR)CEO V
C-Base Breakdown Voltage
V(BR)CBO V
Emitter-Base Voltage Max. Collector Current Max. Collector Dissipation Junc... |
Document |
3DD164 Data Sheet
PDF 32.95KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 3DD164 |
ETC |
Low-power silicon NPN transistor | |
2 | 3DD164F |
INCHANGE |
NPN Transistor | |
3 | 3DD166 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
4 | 3DD167 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
5 | 3DD167A |
INCHANGE |
NPN Transistor |