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IXTH200N085T |
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| Part Number | IXTH200N085T |
| Manufacturer | IXYS Corporation |
| Description | Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID... |
| Features |
Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive
- Motor Drives - 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V
Systems High Current Switching Applications
© 2006 IXYS CORPORATION All rights reserved
DS99703 (11/06)
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1
Ciss Coss Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
... |
| Document |
 IXTH200N085T Data Sheet
PDF 196.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTH200N075T |
IXYS Corporation |
Power MOSFET |
|
| 2 | IXTH200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTH200N10T |
IXYS Corporation |
Power MOSFET |
|
| 4 | IXTH200N10T |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTH20N50D |
IXYS |
High Voltage MOSFET |
|