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GT40Q321 |
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| Part Number | GT40Q321 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application · · · · · The 5th generation Enhancement-mode High speed : tf = 0.... |
| Features |
Emitter
1
2003-02-05
GT40Q321
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = −20 A/µs Test Condition VGE = ±25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC... |
| Document |
 GT40Q321 Data Sheet
PDF 175.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GT40Q322 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 2 | GT40Q323 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 3 | GT40QR21 |
Toshiba |
Silicon N-Channel IGBT |
|
| 4 | GT40G121 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 5 | GT40J121 |
Toshiba |
Silicon N-Channel IGBT |
|