GT40J121 - Toshiba

GT40J121 Silicon N-Channel IGBT

Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) Sixth generation (2) Enhancement mode (3) High-speed swit.

Features

(1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.20 µs (typ.) (IC = 40 A) (4) Low saturation voltage: VCE(sat) = 1.45 V (typ.) (IC = 40 A) (5) TO-3P(N)IS (Toshiba package name) 3. Packaging and Internal Circuit GT40J121 TO-3P(N)IS 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.2.0 GT40J121 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (1 ms) Collector current (100 µ.