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IRGP4760DPbF |
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| Part Number | IRGP4760DPbF |
| Manufacturer | International Rectifier |
| Description | VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE(ON) and Switching... |
| Features |
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant
IRGP4760DPbF IRGP4760D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
G
E
n-channel
G Gate
E GC IRGP4760DPbF TO‐247AC
C Collector
E GC
IRGP4760D‐EPbF TO‐247AD
E Emitter
Benefits High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly
Base part number
IRGP4760DPbF IRGP4... |
| Document |
 IRGP4760DPbF Data Sheet
PDF 914.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRGP4760D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 2 | IRGP4760-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 3 | IRGP4760PbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 4 | IRGP4740D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 5 | IRGP4740DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|