SVD8N80F |
Part Number | SVD8N80F |
Manufacturer | Silan Microelectronics |
Description | SVD8N80T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the im... |
Features |
∗ 8A,800V,RDS(on)(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No. SVD8N80T SVD8N80F Package TO-220-3L TO-220F-3L Marking SVD8N80T SVD8N80F Material Pb free Pb free Packing Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.20 Page 1 of 8
SVD8N80T/F_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Av... |
Document |
SVD8N80F Data Sheet
PDF 555.72KB |
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