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3DG102 |
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| Part Number | 3DG102 |
| Manufacturer | Shaanxi Qunli |
| Description | Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG100, 3DG102 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. ... |
| Features |
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA:
Specifications Parameter name Total Dissipation Max. Collector Current Junction Temperature Storage Temperature C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbols Unit A B 3DG100 C D A 3DG102 B C D
(Ta = 25°C )
Ptot ICM Tjm Tstg
mW mA... |
| Document |
 3DG102 Data Sheet
PDF 30.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 2 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR |
|
| 3 | 3DG101 |
ETC |
Silicon NPN high frequency low power transistor |
|
| 4 | 3DG101 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 5 | 3DG110 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|