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MT48H4M16LF |
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| Part Number | MT48H4M16LF |
| Manufacturer | Micron Technology |
| Description | . . . . . . . . . . .5 Functional Description . . . . . ... |
| Features |
Mobile SDRAM
MT48H4M16LF – 1 Meg x 16 x 4 banks Features • 1.70 –1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or continuous page1 • Auto precharge, includes concurrent auto precharge • Self refresh mode • 64ms, 4,096-cycle refresh • LVTTL-compatible inputs and outputs • Partial-array self refresh (PASR) power-saving mode • On-die temperature-compensated self refresh (TCSR) • Deep power-d... |
| Document |
 MT48H4M16LF Data Sheet
PDF 892.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MT48H4M32LF |
Micron Technology |
Mobile Low-Power SDR SDRAM |
|
| 2 | MT48H16M16LF |
Micron Technology |
(MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM |
|
| 3 | MT48H16M16LFBG |
Micron Technology |
256M x 16 Mobile SDRAM |
|
| 4 | MT48H16M16LFFG |
Micron Technology |
256M x 16 Mobile SDRAM |
|
| 5 | MT48H16M32LF |
Micron Technology |
Mobile LPSDR SDRAM |
|