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R1RW0404D |
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| Part Number | R1RW0404D |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing ... |
| Features |
• Single supply: 3.3 V ± 0.3 V • Access time: 12 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 100 mA (max) • TTL standby current: 40 mA (max) • CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version) • Data retention current: 0.4 mA (max) (L-version) • Data retention voltage: 2 V (min) (L-version) • Center VCC and VSS type pin out Rev.1.00, Mar.12.2004, page 1 of 11 R1RW0404D Series Ordering Information Type No. R1RW0404DGE-2PR R1RW0404DGE-2LR Access time 1... |
| Document |
 R1RW0404D Data Sheet
PDF 167.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | R1RW0404DGE-2LR |
Renesas |
4M High Speed SRAM |
|
| 2 | R1RW0404DGE-2PR |
Renesas |
4M High Speed SRAM |
|
| 3 | R1RW0408D |
Renesas |
4M High Speed SRAM |
|
| 4 | R1RW0408DGE-2LR |
Renesas |
4M High Speed SRAM |
|
| 5 | R1RW0408DGE-2PI |
Renesas |
4M High Speed SRAM |
|