HY27UH08AG5B |
Part Number | HY27UH08AG5B |
Manufacturer | Hynix |
Description | and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / Jan. 2008 1 1 HY27UH08AG5B Series 16Gbit (2G... |
Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. NAND INTERFACE - x8 bus width. - Address/ Data Multiplexing - Pinout compatiblity for all densities SUPPLY VOLTAGE - 3.3V device : Vcc = 2.7 V ~3.6 V MEMORY CELL ARRAY - x8 : (2K + 64) bytes x 64 pages x 16384 blocks PAGE SIZE - (2K + 64 spare) Bytes BLOCK SIZE - (128K + 4Kspare) Bytes PAGE READ / PROGRAM - Random access : 25us (max.) - Sequential ... |
Document |
HY27UH08AG5B Data Sheet
PDF 363.22KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY27UH08AG5M |
Hynix |
16Gb NAND FLASH | |
2 | HY27UH08AGDM |
Hynix |
16Gb NAND FLASH | |
3 | HY27UH084G2M |
Hynix Semiconductor |
(HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory | |
4 | HY27UH088G2M |
Hynix Semiconductor |
8G-Bit NAND Flash Memory | |
5 | HY27UH088GDM |
Hynix Semiconductor |
8G-Bit NAND Flash Memory |