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HY27US081G1M |
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| Part Number | HY27US081G1M |
| Manufacturer | Hynix Semiconductor |
| Description | and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / May. 2007 1 Preliminary HY27US(08/16)1G1M Se... |
| Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code SUPPLY VOLTAGE - VCC = 2.7 to 3.6V : HY27USxx1G1M Memory Cell Array = (512+16) Bytes x 32 Pages x 8,192 Blocks = (256+8) Words x 32 Pages x 8,192 Blocks PAGE SIZE - x8 device : (512 + 16 spare) Bytes : HY27US081G1M - x16 device : (256+ 8 spare) Words :... |
| Document |
 HY27US081G1M Data Sheet
PDF 312.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY27US08121A |
Hynix Semiconductor |
512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory |
|
| 2 | HY27US08121B |
Hynix Semiconductor |
512Mb NAND FLASH |
|
| 3 | HY27US08121M |
Hynix Semiconductor |
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
|
| 4 | HY27US08122B |
Hynix Semiconductor |
512Mb NAND FLASH |
|
| 5 | HY27US08281A |
Hynix Semiconductor |
(HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
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