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G20N60C3D |
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| Part Number | G20N60C3D |
| Manufacturer | Intersil Corporation |
| Description | HGTG20N60C3D Data Sheet January 2000 File Number 4494.2 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly ... |
| Document |
 G20N60C3D Data Sheet
PDF 81.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G20N60C3 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 2 | G20N60B3 |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | G20N60B3D |
Fairchild |
40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
|
| 4 | G20N60HS |
Infineon |
High Speed IGBT |
|
| 5 | G20N100D2 |
Intersil Corporation |
HGTG20N100D2 |
|