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FM28V102A |
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| Part Number | FM28V102A |
| Manufacturer | Cypress Semiconductor |
| Description | Address inputs: The 16 address lines select one of 64K words in the F-RAM array. The lowest two address lines A1–A0 may be used for page mode read and write operations. Write Enable: A write cycle beg... |
| Features |
■ ■ ■ ■ ■ Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 C to +85 C 44-pin thin small outline package (TSOP) Type II Restriction of hazardous substances (RoHS) compliant 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation to 30-ns cycle time ❐ Advanced high-reliability ferroelectric process SRAM compatible ❐ Industry-standard 64 K ... |
| Document |
 FM28V102A Data Sheet
PDF 337.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FM28V100 |
Ramtron |
1Mbit Bytewide F-RAM Memory |
|
| 2 | FM28V100 |
Cypress Semiconductor |
1-Mbit (128 K x 8) F-RAM Memory |
|
| 3 | FM28V020 |
Ramtron Corporation |
256Kbit Ferroelectric Nonvolatile RAM |
|
| 4 | FM28V020 |
Cypress Semiconductor |
256-Kbit (32 K x 8) F-RAM Memory |
|
| 5 | FM28V202A |
Cypress Semiconductor |
2-Mbit (128 K x 16) F-RAM Memory |
|