AP18T10GI |
Part Number | AP18T10GI |
Manufacturer | Advanced Power Electronics |
Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package i... |
Features |
unction-case Maximum Thermal Resistance, Junction-ambient Value 4.5 65 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200903052
AP18T10GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Test Conditions VGS=0V, ID=250uA
2
Min. 100 1 -
Typ. 5.6 10 2.5 4.5 6.5 10 13 3.4 425 55 33
Max. Units 160 3 25 250 +100 1... |
Document |
AP18T10GI Data Sheet
PDF 90.41KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP18T10GH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP18T10GH-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP18T10GH-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP18T10GJ |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP18T10GJ-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |