AP9465GEM-HF-3 |
Part Number | AP9465GEM-HF-3 |
Manufacturer | Advanced Power Electronics |
Description | D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9465GEM-HF-3 is in the SO-8 package, which is wide... |
Features |
o 150 -55 to 150
W
W/°C °C °C
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W
Ordering Information
AP9465GEM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
200811133-3
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Advanced Power Electronics Corp.
AP9465GEM-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=1mA
Min. 40 0.8 -
Typ. 0.03 15 8.5 1.6 4.1 5.3 6.7 20.5 4.5 610 ... |
Document |
AP9465GEM-HF-3 Data Sheet
PDF 96.21KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP9465GEM-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP9465GEM |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP9465AGH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP9465AGJ |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP9465BGH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |