AP9465GEM - Advanced Power Electronics

AP9465GEM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Rat.

Features

Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200811133 AP9465GEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=1mA 2 Min. 40 0.8 - Typ. 0.03 15 8.5 1.6 4.1 5.3 6.7 20.5 4.5 610 90 60 1.8 Max. Units 25 32 2.5 1 25 +30 14 980 2.4 V V/℃ mΩ mΩ V S uA uA u.