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AP2302AGN-HF |
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| Part Number | AP2302AGN-HF |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for al... |
| Features |
3
Value 90
Unit ℃/W 1 201009081
Data and specifications subject to change without notice
AP2302AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance R... |
| Document |
 AP2302AGN-HF Data Sheet
PDF 90.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2302AGN-HF-3 |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET |
|
| 2 | AP2302 |
BCD Semiconductor |
3A DDR TERMINATION REGULATOR |
|
| 3 | AP2302GN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP2302GN-HF |
Advanced Power Electronics |
N-channel Enhancement mode Power MOSFET |
|
| 5 | AP2302GN-HF-3 |
Advanced Power Electronics |
N-channel Enhancement mode Power MOSFET |
|