AP9410GM-HF |
Part Number | AP9410GM-HF |
Manufacturer | Advanced Power Electronics |
Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely prefer... |
Features |
esistance, Junction-ambient
3
Value 50
Unit ℃/W 1 201009212
Data and specifications subject to change without notice
AP9410GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=18A VGS=4.5V, ID=12A VGS=2.5V, ID=6A
Min. 30 -
Typ. 47 59 10 23 16 12 96 30 660 400
Max. Units 5 6 8 1.2 1 25 +100 95 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold... |
Document |
AP9410GM-HF Data Sheet
PDF 92.26KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP9410GM |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP9410GMT-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP9410GH-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP9410AGH-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP9410AGM-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |