AP9410AGM-HF - Advanced Power Electronics

AP9410AGM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Sy.

Features

al Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201009101 Data and specifications subject to change without notice AP9410AGM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=15A VGS=4.5V, ID=12A VGS=2.5V, ID=6A Min. 30 0.5 - Typ. 4.2 4.7 6 60 28 3 12.5 13 14 40 23 510 280 1 Max. Units 5 5.5 8 1.2 10 +100 45 2 V mΩ mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS.